TPH3205WSBQA中文资料650V 49mΩ AEC-Q101 Qualified GaN FET in TO-247数据手册Transphorm规格书

描述 Description

The TPH3205WSBQA 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

特性 Features

• JEDEC and AEC-Q101 qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
— Intrinsic lifetime tests
— Wide gate safety margin
— Transient over-voltage capability
• Very low QRR
• Reduced crossover loss
• RoHS compliant and Halogen-free packaging

Benefits
• Enables AC-DC bridgeless totem-pole PFC designs
— Increased power density
— Reduced system size and weight
— Overall lower system cost
• Achieves increased efficiency in both hard- and softswitched circuits
• Easy to drive with commonly-used gate drivers
• GSD pin layout improves high speed design\r

应用 Application

• Automotive
• Datacom
• Broad industrial
• PV inverter
• Servo motor