丝印：TPH2R408QM；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Small output charge: Qoss = 90 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

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TOSHIBA

东芝

Power MOSFET (N-ch single 60V

Application Scope：High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers\nPolarity：N-ch\nGeneration：U-MOSⅩ-H\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain-Source voltage VDSS 80 V \nGate-Source voltage VGSS 20 V \nDrain current ID 120 A \nPower Dissipation PD 210 W ;

Toshiba

东芝

SOPAdvance

TOSHIBA/东芝

上传：深圳庞田科技有限公司

SOPAdvance

TOSHIBA/东芝

上传：深圳庞田科技有限公司

A/N

TI

德州仪器

上传：深圳诚思涵科技有限公司