丝印：TPH2R306NH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (5)

文件：395.09 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TPH2R306NH1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 91 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

文件：507.91 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 130 A \nPower Dissipation PD 78 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Power MOSFET (N-ch single 30V

Application ScopeDC-DC Converters / Switching Voltage Regulators / Motor Drivers\nPolarityN-ch\nGenerationU-MOSⅧ-H\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝