丝印：TPH2900ENH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5

文件：262.93 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 150V VDSS 250V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 36 A \nPower Dissipation PD 78 W \nDrain-Source voltage VDSS 200 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5

文件：378.35 Kbytes 页数：10 Pages

TOSHIBA

东芝

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：93.8 Kbytes 页数：20 Pages

NEC

瑞萨

Bandpass Filter

文件：239.12 Kbytes 页数：1 Pages

MINI