丝印：TPH1R403NL1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Small output charge: Qoss = 50 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage

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丝印：TPH1R403NL；Package：SOP；MOSFETs Silicon N-channel MOS (U-MOS??H)

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Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 150 A \nPower Dissipation PD 64 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

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Power MOSFET (N-ch single VDSS≤30V)

Application ScopeHigh-Efficiency DC-DC Converters / Switching Voltage Regulators\nPolarityN-ch\nGenerationU-MOSⅧ-H\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Available

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