丝印：TPH1R306PL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V)

文件：675.72 Kbytes 页数：10 Pages

TOSHIBA

东芝

Silicon N-channel MOS (U-MOS-H)

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS

文件：658.38 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 260 A \nPower Dissipation PD 170 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

东芝

Power MOSFET (N-ch single 30V

Application ScopeHigh-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers\nPolarityN-ch\nGenerationU-MOSⅨ-H\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝