丝印：TPH1R306P1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.96 mΩ (typ.) (VGS = 10 V

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TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 260 A \nPower Dissipation PD 170 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

东芝

SOP-8

TOSHIBA

东芝

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SOT23-5

3PEAK

思瑞浦

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QFN8

TOSHIBA/东芝

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