丝印：65R175M；Package：DFN-8x8；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

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丝印：65R365M；Package：DFN-8x8；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

文件：614.86 Kbytes 页数：8 Pages

WUMC

紫光国微

丝印：65R365M；Package：DFN-8x8；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

文件：614.83 Kbytes 页数：8 Pages

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High Speed USB 2.0 (480Mbps) DPDT Analog Switch

Features » Low On-resistance, Ron=1.5Q when VCC =5V/ « 1.8V Logic Compatible Control Pin » High Off-Isolation: -100dB @ 100KHz '« COM+/- Overrides VCC to Achieve True Isolation Even When Supply Is Dead » Low Channel-to-Channel Crosstalk: -97dB @ 100KHz « High Bandwidth (-3dB @8

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High Speed USB 2.0 (480Mbps) DPDT Analog Switch

Features » Low On-resistance, Ron=1.5Q when VCC =5V/ « 1.8V Logic Compatible Control Pin » High Off-Isolation: -100dB @ 100KHz '« COM+/- Overrides VCC to Achieve True Isolation Even When Supply Is Dead » Low Channel-to-Channel Crosstalk: -97dB @ 100KHz « High Bandwidth (-3dB @8

文件：3.54801 Mbytes 页数：7 Pages

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High Speed USB 2.0 (480Mbps) DPDT Analog Switch

Features » Low On-resistance, Ron=1.5Q when VCC =5V/ « 1.8V Logic Compatible Control Pin » High Off-Isolation: -100dB @ 100KHz '« COM+/- Overrides VCC to Achieve True Isolation Even When Supply Is Dead » Low Channel-to-Channel Crosstalk: -97dB @ 100KHz « High Bandwidth (-3dB @8

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1-Line Bi-directional ESD DIODE

Features | o Low operating voltage: 3.3V » Ultra low capacitance: 0.8pF (typ) « Ultra low leakage: nA level o Low clamping voltage « ~IEC 61000-4-2 (ESD) immunity test Air discharge: £30kV Contact discharge: +30kV —IEC61000-4-4 (EFT) 40A (5/5005) © 2-pinleadless package ® These are Pb-

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1-Line Bi-directional ESD DIODE

Features « Low operating voltage: 5V/ » Ultra low capacitance: 0.8pF (typ) Ultra low leakage: nA level « Low clamping voltage « ~IEC 61000-4-2 (ESD) immunity test Air discharge: £30kV Contact discharge: £30kV ~IEC61000-4-4 (EFT) 40A (5/50ns) © 2-pinleadless package These are Pb-Free Devi

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TVS Diode Array

Features #150 Watts peak pulse power (tp = 8/20ps) Transient protection for high speed data lines to IEC 61000-4-2 (ESD) +15kV (air), +8KV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) # Working voltages : 5V 4 Protects two unidirectional line Low operating and clamping voltages #

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Low Capacitance TVS Diode

Features # 300W peak pulse power(8/200is) 4 Ultra low leakage: nA level ® Operating voltage: 12V ® Low clamping voltage 4 Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: +30kV —IEC61000-4-4 (EFT) 40A (5/50ns) —~IEC61000-4-5 (

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