首页 >TPF141-TRT>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TRB141 FEATURES 4G(LTE)–Cat1upto10Mbps,3G–Upto42Mbps,2G–Upto236.8kbps Signalstrength(RSSI),SINR,RSRP,RSRQ,EC/IO,RSCPBytessent/received,connectedband,IMSI,ICCID. SMSstatus,SMSconfiguration,send/readSMSviaHTTPPOST/GET,EMAILtoSMS,SMStoEMAIL,SMStoHTTP,SMS | TELTONIKA TELTONIKA NETWORKS. | TELTONIKA | ||
IRReceiverModulesforRemoteControlSystems DESCRIPTION ThisIRreceiverseriesisoptimizedforshortburstremote controlsystemsindifferentenvironments.Thecustomer canchosebetweendifferentICsettings(AGCvariants),to findtheoptimumsolutionforhisapplication.Thehigherthe AGC,thebetternoiseissuppressed,butthe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
IRReceiverModulesforRemoteControlSystems DESCRIPTION ThisIRreceiverseriesisoptimizedforshortburstremote controlsystemsindifferentenvironments.Thecustomer canchosebetweendifferentICsettings(AGCvariants),to findtheoptimumsolutionforhisapplication.Thehigherthe AGC,thebetternoiseissuppressed,butthe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
IRReceiverModulesforRemoteControlSystems DESCRIPTION ThisIRreceiverseriesisoptimizedforshortburstremote controlsystemsindifferentenvironments.Thecustomer canchosebetweendifferentICsettings(AGCvariants),to findtheoptimumsolutionforhisapplication.Thehigherthe AGC,thebetternoiseissuppressed,butthe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
IRReceiverModulesforRemoteControlSystems DESCRIPTION ThisIRreceiverseriesisoptimizedforshortburstremote controlsystemsindifferentenvironments.Thecustomer canchosebetweendifferentICsettings(AGCvariants),to findtheoptimumsolutionforhisapplication.Thehigherthe AGC,thebetternoiseissuppressed,butthe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TY-141P Description: Thesetransformersoperateinthe200Hzto15,000Hzrange,makingthemsuitableforabroadapplicationspectrumintheaudioindustry.Thesedevicesareusedinlinematching,telephonecoupling,pulsetrigger,driver,interstage,output,isolationandinputapplications. Constru | TRIAD TRIAD MAGNETICS | TRIAD | ||
SparkGapProtectors | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
SparkGapProtectors(SPG) Features Approximatelyzeroleakingcurrentbeforeclampingvoltage Lessdecayaton/offstate. Highcapabilitytowithstandrepeatedlightningstrikes. Lowelectrodecapacitance(≤1.0pF)andhighisolation(≥100MΩ). RoHScompliant. Bilateralsymmetrical. Temperature,humidityandlightnes | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
SparkGapProtectors(SPG) Features Approximatelyzeroleakingcurrentbeforeclampingvoltage Lessdecayaton/offstate. Highcapabilitytowithstandrepeatedlightningstrikes. Lowelectrodecapacitance(≤0.8pF)andhighisolation(≥100MΩ). RoHScompliant. Bilateralsymmetrical. Temperature,humidityandlightnes | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
SparkGapProtectors(SPG) Features Approximatelyzeroleakingcurrentbeforeclampingvoltage Lessdecayaton/offstate. Highcapabilitytowithstandrepeatedlightningstrikes. Lowelectrodecapacitance(≤1.0pF)andhighisolation(≥100MΩ). RoHScompliant. Bilateralsymmetrical. Temperature,humidityandlightne | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI |
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