丝印：7212F1810；Package：P-WQFN32-0505-0.50-002；Power MOSFET Gate Driver for 3-Phase DC Motor

The TPD7212F is a power MOSFET gate driver for 3-phase full-bridge circuits for the charge pump method by the BiCD process. The inclusion of a charge pump circuit for drivers inside the IC makes it easy to configure a 3-phase full-bridge circuit Features  Power MOSFET gate driver for 3-phas

文件：919.87 Kbytes 页数：21 Pages

TOSHIBA

东芝

丝印：TPD7212FN；Package：SSOP30-P-300-0.65；Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

Power MOSFET Gate Driver for 3-Phase brushless DC Motor 1. Description The TPD7212F is a power MOSFET gate driver for 3-phase full-bridge circuits by the BiCD process. The inclusion of a charge pump circuit for drivers inside the IC makes it easy to configure a 3-phase full-bridge circuit. 2

文件：884.74 Kbytes 页数：24 Pages

TOSHIBA

东芝

Intelligent power device (3phase full bridge power-MOSFET driver with built-in charge pump)

Application Scope：3-phase DC motor drivers\nInput / Output：H/H\nInput / Output (Q1)：H/H\nInput / Output (Q2)：H/H\nNumber of Circuits：1\nProtection Functions：Voltage monitor of output / Voltage monitor of power supply for driver\nAEC-Q100：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly ba Output current ISINK 1.5 A \nOutput current ISOURCE 1 A \nPower Dissipation PD 3.6 W \nJunction temperature Tj 175 ℃ \nOperating Temperature (Max) Topr 150 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nPower Supply Voltage VDD -0.3 to 25 V \nDrain-Source voltage VDSS 40 V ;

Toshiba

东芝

Intelligent power device (3phase full bridge power-MOSFET driver with built-in charge pump)

Toshiba

东芝