Intelligent power device (High side power-MOSFET driver with built-in charge pump)

Input / Output：H/H\nInput / Output (Q1)：H/H\nInput / Output (Q2)：H/H\nNumber of Circuits：1\nProtection Functions：Overcurrent\nAEC-Q100：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n Output current ISINK 0.005 A \nPower Dissipation (mounted on board) PD 0.7 W \nJunction temperature Tj 150 ℃ \nOperating Temperature (Max) Topr 125 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nPower Supply Voltage VDD -0.3 to 24 V \nDrain-Source voltage VDSS 32 V \n;

Toshiba

东芝

1 channel High-Side N channel Power MOSFET Gate Driver

文件：589.17 Kbytes 页数：13 Pages

TOSHIBA

东芝

20V Dual P-Channel Enhancement Mode MOSFET

文件：135.29 Kbytes 页数：3 Pages

TSC

台湾半导体

PIN DIODE

DESCRIPTION The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the highest capacitance of the group. The differences in specified performa

文件：179.27 Kbytes 页数：4 Pages

MICROSEMI

美高森美

T-1 (3mm) SOLID STATE LAMP

Description The Super Bright Yellow device is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Features ● LOW POWER CONSUMPTION. ● POPULAR T-1 DIAMETER PACKAGE. ● GENERAL PURPOSE LEADS. ● RELIABLE AND RUGGED. ● LONG LIFE - SOLID STATE RELIABILITY. ● AVAILABLE ON TAPE AND

文件：108.58 Kbytes 页数：4 Pages

KINGBRIGHT

今台电子