1 channel High-Side N channel Power MOSFET Gate Driver

文件：268.05 Kbytes 页数：16 Pages

TOSHIBA

东芝

1 channel High-Side N channel Power MOSFET Gate Driver

文件：269.06 Kbytes 页数：16 Pages

TOSHIBA

东芝

Intelligent power device (High side power-MOSFET driver with built-in charge pump)

Feature：VGS monitor\nInput / Output：H/H\nInput / Output (Q1)：H/H\nInput / Output (Q2)：H/H\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Output sink current(DC) IOUT2(+) 0.005 A \nPower Dissipation PD 0.7 W \nJunction temperature Tj 150 ℃ \nOperating Temperature (Max) Topr 125 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nPower Supply Voltage VDD -0.3 to 25 V \nDrain-Source voltage VDSS 25 V ;

Toshiba

东芝

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

文件：81.65 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

PIN DIODE

DESCRIPTION The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the highest capacitance of the group. The differences in specified performa

文件：179.27 Kbytes 页数：4 Pages

Microsemi

美高森美

HIGH POWER PIN DIODES

文件：335.09 Kbytes 页数：7 Pages

Microsemi

美高森美