丝印：64F；Package：P-HSSOP31-0918-0.80-002；High Voltage Monolithic Silicon Power IC

Applications DC brushless motor driver IC Features ● High voltage power side and low voltage signal side terminal are separated. ● It is the best for current sensing in three shunt resistance. ● Bootstrap circuit gives simple high-side supply. ● Bootstrap diodes are built in. ● A dead time

文件：482.7 Kbytes 页数：13 Pages

TOSHIBA

东芝

Intelligent power device 600V (High voltage PWM DC brushless motor driver)

Feature：5V Voltage Regulator\n\nNumber of Circuits：1\n\nProtection Functions：Overcurrent / Thermal shutdown / Overvoltage\n\nOutput configuration：3-phase full-bridge\n\nDrive Type：Sine-wave / Square-wave\n\nControl Circuit：Non-built-in\n\nPower Block：IGBT\n\nRoHS Compatible Product(s) (#)：Available\

Toshiba

东芝

High Voltage Monolithic Silicon Power IC

Applications DC brushless motor driver IC Features ● High voltage power side and low voltage signal side terminal are separated. ● It is the best for current sensing in three shunt resistance. ● Bootstrap circuit gives simple high-side supply. ● Bootstrap diodes are built in. ● A dead time

文件：455.68 Kbytes 页数：13 Pages

TOSHIBA

东芝

Logic Analyzer Module

文件：1.84343 Mbytes 页数：34 Pages

KEYSIGHT

是德科技

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

DESCRIPTION The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-chann

文件：363.29 Kbytes 页数：6 Pages

NEC

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