TPD2015FN

Marking：TPD2015FN；Package：SSOP30-P-300-0.65；Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit

Highsidepowerswitcharray(8-channels)formotors,solenoids,lampdrives Description TPD2015FNisahigh-sideswitcharray(8-channels)withMOSFEToutputs.ThisisthemonolithicpowerICthatcanbedrivendirectlyfromCMOS,TTLlogiccircuitry(MCU,etc.)andhaveovercurrentandover

TPD2017FN

Marking：TPD2017FN；Package：SSOP30-P-300-0.65；Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit

Lowsidepowerswitcharray(8-channels)formotors,solenoids,lampdrives Description TPD2017FNisalow-sideswitcharray(8channels)withMOSFET out.ThisisthemonolithicpowerICthatcanbedrivendirectlyfrom CMOS,TTLlogiccircuitry(MCUs,etc.)andhaveovercurrentand therma

TPD2E001DRLR

Marking：UD；Package：SOT-553；TVS DIODE ARRAY FOR USB LINE PROTECTION

Features 72WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsTwoI/OLinesandVcc LowClampingVoltage RoHSCompliant IEC61000-4-2(ESD)±17kV(air),±14kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs) IECCompatibility Applications USBPortProtect

TPD2E001DRLR

Marking：2AZ；Package：SOT-5X3；Low-Capacitance 2-Channel ESD-Protection for High-Speed Date Interfaces

Features ●Ultralowcapacitance:1.5pF(Max) ●Ultralowleakage:nAlevel ●Lowoperatingvoltage:5.5V ●Lowclampingvoltage ●Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±15kV Contactdischarge:+8kV -IEC61000-4-4(EFT)40A(5/50ns) ●ROHSCo

TPD2E001DZDR

Marking：U5V0；Package：SOT-143；Low Capacitance TVS Diode Array

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±20kV Contactdischarge:±20kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)3A(8/20μs) RoHSCompliant

TPD2E007DCKR

Marking：15C；Package：SOT-23；BIDIRECTIONAL TVS DIODE ARRAY FOR LATCH-UP PROTECTION

Features Ultralowleakage:nAlevel Operatingvoltage:15V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)10A(8/20μs) RoHSCompliant

TPD2E007DCKR-TP

Marking：45U；Package：SOT323；2-Channel ESD Protection

Features ●Ultralowleakage:nAlevel ●Operatingvoltage:±13V ●Lowclampingvoltage ●Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)6A(8/20μs) ●RoHS

TPD2E009DRTR

Marking：M5；Package：SOT-723；100 Watts Peak Pulse Power per Line (tp=8/20μs)

Features 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsTwoLines LowClampingVoltage WorkingVoltages:5V LowLeakageCurrent IEC61000-4-2(ESD)±17kV(air),±10kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs) Applications CellularHandsets

TPD2EUSB30DRTR

Marking：M5；Package：SOT-723；100 Watts Peak Pulse Power per Line (tp=8/20μs)

Features 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsTwoLines LowClampingVoltage WorkingVoltages:5V LowLeakageCurrent IEC61000-4-2(ESD)±17kV(air),±10kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs) Applications CellularHandsets

TPD2EUSB30DRTR

2-Channel ESD Protection for Super-Speed USB 3.0 Interface

Features ●SupportsUSB3.0datarates(5Gbps) ●Ultralowcapacitance:0.4pFtypicalI/OtoGND ●Ultralowleakage:nAlevel ●Lowoperatingvoltage:5.5V ●Uni-directionalTVSDiodeArray ●Lowclampingvoltage ●Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest