丝印：8511；Package：PS-8；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters • Photo Flashes Features (1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ.)

文件：187.71 Kbytes 页数：6 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：DC/DC converters\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n Collector Current IC 3.0 A \nCollector Current ICP 5.0 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 3.0 W \nCollector-Base Voltage VCBO 100 V \nCollector-emitter voltage VCEO 50 V \n;

Toshiba

东芝

8 Line ESD/EMI Protections for Color LCD Interfaces

文件：282.64 Kbytes 页数：7 Pages

UNIONSEMI

英联

Multi-line ESD/EMI Protections for Signal Lines

文件：402.88 Kbytes 页数：12 Pages

UNIONSEMI

英联

ASS 0868 HS

文件：101.15 Kbytes 页数：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子