Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power MOSFET (N-ch + P-ch complementary

Application Scope：Cellular phones / Motor drivers\nPolarity：N-ch + P-ch\nGeneration：U-MOSⅥ-H/U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current (Q1) ID 6 A \nDrain-Source voltage (Q1) VDSS 40 V \nGate-Source voltage (Q1) VGSS +/-20 V \nDrain current (Q2) ID -5 A \nDrain-Source voltage (Q2) VDSS -40 V \nGate-Source voltage (Q2) VGSS +/-20 V \nPower Dissipation PD 1.48 W ;

Toshiba

东芝

32-Bit Parallel Error Detection and Correction Circuit

文件：225.31 Kbytes 页数：14 Pages

NSC

国半

32-Bit Parallel Error Detection and Correction Circuit

文件：225.31 Kbytes 页数：14 Pages

NSC

国半

32-Bit Parallel Error Detection and Correction Circuit

文件：225.31 Kbytes 页数：14 Pages

NSC

国半