Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Mobile equipments / Motor drivers\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 5 A \nPower Dissipation PD 1.96 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

TRIPOLAR PROTECTION FOR ISDN INTERFACES

Description Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil™ with low capacitance. Features ■ Bidirectional triple crowbar protection ■ Peak pulse current: IPP = 30 A , 10/1000 µs ■ Breakdown voltage: – TPI80N: 80 V – T

文件：56.53 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Tripolar protection for ISDN interfaces

文件：193.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Tripolar protection for ISDN interfaces

文件：195.07 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体