首页 >TPCF8102(T5LLNV2F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=6.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=44S(typ.) •Lowleakagecurrent:IDSS=−10μA( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=13.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=24S(typ.) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) •Enhancement | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCs | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Lithium-IonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LOWPOWERHALLEFFECTSWITCH | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
RFAMPLIFIERICFOR150MHzTO330MHzPAGERSYSTEM DESCRIPTION µPC8102TisasiliconmonolisicintegratedcircuitdesignedasRFamplifierfor150MHzto330MHzpagersystem.Dueto1Vsupplyvoltage,thisICissuitableforlowvoltagepagersystem.Thepackageisa6pinminimoldsuitableforhigh-densitysurfacemounting. ThisICismanufa | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
RFAMPLIFIERICFOR150MHzTO330MHzPAGERSYSTEM DESCRIPTION µPC8102TisasiliconmonolisicintegratedcircuitdesignedasRFamplifierfor150MHzto330MHzpagersystem.Dueto1Vsupplyvoltage,thisICissuitableforlowvoltagepagersystem.Thepackageisa6pinminimoldsuitableforhigh-densitysurfacemounting. ThisICismanufa | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •1Vsupplyvoltage:VCC=0.9Vto2.0V •Lownoisefigure:2.3dBTYP.@fin=150MHz(withexternalmatchingcircuittooptimizeNF) •Lowcurrentconsumption:ICC=0.5mATYP.@VCC=1.0V •Gainavailablefrequency:fRF=150MHzto330MHz(withexternalmatchingcircuit) • | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel100-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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