Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅤ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 22 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

东芝

Notebook PC Applications Portable Equipment Applications

文件：236.25 Kbytes 页数：7 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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东芝

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Lead (Pb)-Free • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 7 mΩ (typ.) • High forward transfer admittance :|Yfs| = 36 S (typ.) • Low leakage current : IDSS = 10 μA (VDS =

文件：228.07 Kbytes 页数：7 Pages

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