首页 >TPCA8A02-HQM)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AxialGeneralPurposePlasticRectifier FEATURES ·Lowcoatconstruction ·Lowforwardvoltagedrop ·Lowreverseleakage ·Highforwardsurgecurrentcapability ·Hightemperaturesolderingguaranteed: 260℃/10secods/.375”(9.5mm)leadlengthat5lbs(2.3kg)tension | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
GlassPassivatedEfficientFastRecoveryRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
GlassPassivatedStandardRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
GlassPassivatedSuperFastRecoveryRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
GlassPassivatedSuperFastRecoveryRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
GlassPassivatedSuperFastRecoveryRectifier | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
GlassPassivatedSuperFastRecoveryRectifier | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
竊큀SHIBAFieldEffectTransistorwithBuilt-inSchottkyBarrierDiodeHigh-EfficiencyDC/DCConverterApplications High-EfficiencyDC/DCConverterApplications NotebookPCApplications Portable-EquipmentApplications •Built-inschottkybarrierdiode Lowforwardvoltage:VDSF=0.6V(Max.) •High-speedswitching. •Smallgatecharge.:QSW＝11nC(Typ.) •Lowdrain-sourceON-resistance:RDS(ON)=4.3 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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