首页 >TPCA8103(TE12L.Q.M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NoteboookPCApplicationsPortableEqipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=−10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTORSILICONPCHANNELMOSTYPE(U竊뛏OS?? SwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=100to300(IC=0.3A) •Lowcollector-emittersaturation:VCE(sat)=0.2V(max) •High-speedswitching:tf=100ns(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HighEfficiencyDC-DCConverterApplicationsNotebookPCApplicationsPortableEquipmentApplicationsCCFLInverterApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(UltraHighspeedU-MOSIII) HighEfficiencyDC-DCConverterApplications NotebookPCApplications PortableEquipmentApplications CCFLInverterApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=6.5nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=31 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
622Mb/sClock&DataRecovery TheTQ8103isamonolithicclockanddatarecovery(CDR)ICthatreceivesNRZdata,extractsthehigh-speedclock,andpresentstheseparateddataandclockasitsoutputs.ThisdeviceisdesignedspecificallyforSONETOC-12andSDHSTM-4applicationsat622Mb/s. Features •Single-chipCDRcir | TriQuint TriQuint Semiconductor | TriQuint |
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