TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

High-Efficiency DC／ DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: Qsw = 7.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.1 mΩ (typ.) • High forward

文件：41.61 Kbytes 页数：4 Pages

TOSHIBA

东芝

High-Efficiency DC竊뢈C Converter Applications

文件：338.29 Kbytes 页数：7 Pages

TOSHIBA

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N-Channel 40 V (D-S) MOSFET

文件：1.11987 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

High-Efficiency DC竊뢈C Converter Applications

文件：338.29 Kbytes 页数：7 Pages

TOSHIBA

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅢ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 30 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 40 V ;

Toshiba

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