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TPCF8004

Lithium-IonSecondaryBatteries

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8004

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8004

FieldEffectTransistorSiliconNChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:Qg=26nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=21S(typ.) •Lowleakage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCS8004

High-SpeedSwitchingApplicationsSwitchingRegulatorApplicationsDC-DCConverterApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCS8004

SiliconNChannelMOSType(Pi-MOSV)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPESD8004MUTAG

LowCapactionce4-LineUni-directionalTVSDiode

Features Ultralowcapacitance:0.1pFtypical(I/Oto1/0) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage Upto4datalinesandonepowerlineprotects Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischar

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TPWR8004PL

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=23nC(typ.) (3)Smalloutputcharge:Qoss=85.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.65mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

XL8004

80V1ASwitchingCurrentBuckPFMLEDConstantCurrentDriver

XLSEMIxlsemi

芯龙上海芯龙半导体技术股份有限公司

XL8004

80V1ASwitchingCurrentBuckPFMLEDConstantCurrentDriver

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