General Purpose 1-ch; DIP

Galaxy

银河微电

VCEO=80V, IF=50m, CTR:130~260% DC Input Phototransistor

TSC

台湾半导体

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V)

特点(Features): 电流转换比(CTR: 最小. 50工作条件IF=5mA, VCE=5V) Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) 绝缘电压：(VISO=5,000Vrms) Insulation Voltage = 5,000Vrms 响应时间 (tr: TYP. 4μs 工作条件 VCE=2V, IC=2mA, RL=100 Ω) Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω)

文件：2.10258 Mbytes 页数：4 Pages

UMW

友台半导体

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V)

● 特点(Features): 1. 电流转换比(CTR: 最小. 50工作条件IF=5mA, VCE=5V) Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) 2. 绝缘电压：(VISO=5,000Vrms) Insulation Voltage = 5,000Vrms 3. 响应时间 (tr: TYP. 4μs 工作条件 VCE=2V, IC=2mA, RL=100 Ω) Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA,

文件：2.10257 Mbytes 页数：4 Pages

UMW

友台半导体

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V)

● 特点(Features): 1. 电流转换比(CTR: 最小. 50工作条件IF=5mA, VCE=5V) Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) 2. 绝缘电压：(VISO=5,000Vrms) Insulation Voltage = 5,000Vrms 3. 响应时间 (tr: TYP. 4μs 工作条件 VCE=2V, IC=2mA, RL=100 Ω) Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA,

文件：2.10257 Mbytes 页数：4 Pages

UMW

友台半导体