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TPCA8106

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=2.9mΩ(typ.) (VG

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCA8106

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCC8106

MOSFETsSiliconP-ChannelMOS(U-MOS)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8106

Lithium-IonSecondaryBatteriesPowerManagementSwitchesNotebookPCs

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TQ8106

SONET/SDHTransceivers

TheTQ8105/TQ8106areSONET/SDHtransceiversthatintegratemultiplexing,demultiplexing,SONET/SDHframing,clock-synthesisPLL,andenhancedlineandclockdiagnosticfunctionsintoasinglemonolithicdevice.TheTQ8106isapin-compatibleupgradeoftheTQ8105thatincludesaClockandDataRe

TriQuint

TriQuint Semiconductor

UPC8106

SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheµPC8106TBandµPC8109TBaresiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellular/cordlesstelephonetransmitterstage.TheµPC8106TBfeaturesimprovedintermodulationandµPC8109TBfeatureslowcurrentconsumption.Fromthesetwoversion,youcanc

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8106T

3V,SILICONMMICFREQUENCYUP-CONVERTER

DESCRIPTION TheUPC8106TandUPC8109TareL-BandFrequencyUpConvertersmanufacturedusingtheNESATIIIMMICprocess.TheUPC8106TwasdesignedforlowdistortionwhiletheUPC8109Twasdesignedforlowcurrentconsumption.Operationfroma3voltsupplyvoltagemakesthisdeviceidealforhandh

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8106T

3V,SILICONMMICFREQUENCYUP-CONVERTER

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8106TB

SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheµPC8106TBandµPC8109TBaresiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellular/cordlesstelephonetransmitterstage.TheµPC8106TBfeaturesimprovedintermodulationandµPC8109TBfeatureslowcurrentconsumption.Fromthesetwoversion,youcanc

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8106TB

SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULARTELEPHONE

DESCRIPTION TheµPC8163TBisasiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellulartelephonetransmitterstage.TheµPC8163TBhasimprovedintermodulationperformanceandsmallerpackage. TheµPC8163TBismanufacturedusingNEC’s20GHzfTNESATTMlllsiliconbip

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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