首页 >TPC8102-TP(R)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=4.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=60S(typ.) •Lowleakagecurrent:IDSS=−10µA(max | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsNotebookpcApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=14.5mΩ(typ.)(VGS=-10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:Vth | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=24mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmode:Vth=−0.5to−1.2V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=6.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=44S(typ.) •Lowleakagecurrent:IDSS=−10μA( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=13.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=24S(typ.) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) •Enhancement | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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