Power MOSFET (N-ch single VDSS 30V)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：N-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Notebook PCs Mobile Handsets

文件：238.68 Kbytes 页数：9 Pages

TOSHIBA

东芝

Silicon PIN Photodiode

DESCRIPTION VEMD8081 is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with a 5.4 mm2 sensitive area detecting visible and near infrared radiation. FEATURES • Package type: surfa

文件：158.05 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Silicon PIN Photodiode

DESCRIPTION VEMD8081 is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with a 5.4 mm2 sensitive area detecting visible and near infrared radiation. FEATURES • Package type: surfa

文件：157.53 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司