首页 >TPC8006,LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FIELDEFFECTTRANSISTORSILICONNCHANNELMOSTYPE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(?-MOSVII) SwitchingRegulatorApplications MotorDriveApplications DC／DCConverterApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Lowdrain-sourceON-resistance :RDS(ON)=41mΩ(typ.)(VG=10V,ID=9A) •Highforwardtransfer | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SwitchingRegulatorApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconN-ChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=5.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=46S(typ.) •Lowleakagecurrent:IDSS=10μA( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconN-ChannelMOSType(U-MOSIV) NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=6.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=36S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) •Enhancementmode | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
High-SpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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