丝印：H2B；Package：VS-7；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Polarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Collector Current IC 3 A \nCollector Current ICP 5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.6 W \nCollector-emitter voltage VCEO 50 V ;

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ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

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VishayVishay Siliconix

威世科技

TSM6502CR

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TSC

台湾半导体