Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.9 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

文件：226.66 Kbytes 页数：7 Pages

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Silicon P Channel MOS Type (U-MOS III)

文件：259.6 Kbytes 页数：7 Pages

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID -4.5 A \nPower Dissipation PD 2.2 W \nDrain-Source voltage VDSS -20 V ;

Toshiba

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Silicon P Channel MOS Type (U-MOS III)

文件：259.6 Kbytes 页数：7 Pages

TOSHIBA

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