Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：492.98 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Notebook PC Applications Portable Equipment Applications

文件：260.779 Kbytes 页数：7 Pages

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

文件：188.61 Kbytes 页数：6 Pages

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Power MOSFET (N-ch single VDSS 30V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID 6 A \nPower Dissipation PD 2.2 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

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Notebook PC Applications Portable Equipment Applications

文件：260.779 Kbytes 页数：7 Pages

TOSHIBA

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