VN0808L

N-Channel80-and90-V(D-S)MOSFETs

features
LowOn-Resistance:3.6

LowThreshold:1.6V
LowInputCapacitance:35pF
FastSwitchingSpeed:6ns
LowInputandOutputLeakage benefits
LowOffsetVoltage
Low-VoltageOperation
EasilyDrivenWithoutBuffer
High-SpeedCircuits
LowErrorVoltage appli

VN0808L-G

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputimpedanceandpo

VN0808LS

N-Channel80-and90-V(D-S)MOSFETs

VN0808LS

N-Channel80-and90-V(D-S)MOSFETs

features
LowOn-Resistance:3.6

LowThreshold:1.6V
LowInputCapacitance:35pF
FastSwitchingSpeed:6ns
LowInputandOutputLeakage benefits
LowOffsetVoltage
Low-VoltageOperation
EasilyDrivenWithoutBuffer
High-SpeedCircuits
LowErrorVoltage appli

VP0808

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheVP0808Enhancement-mode(normally-off) transistorusesaverticalDMOSstructureanda well-proven,silicon-gatemanufacturingprocess.This combinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpedanceandposi

VP0808

P-ChannelEnhancement-ModeP-ChannelEnhancement-Mode

GeneralDescription TheSupertexVP0808isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

VP0808

P-ChannelEnhancement-ModeVerticalDMOSFETs

VP0808

P-ChannelEnhancement-ModeD-MOSPOWERFETs

[TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers

VP0808

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

VP0808B

P-ChannelEnhancement-ModeMOSFETTransistors

Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf