首页 >TPA6201AIZQVR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualN-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
InfraredEmittingDiode DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesinGaAlAstechnology,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=875nm •Highreliability •Angleofhalfintensity | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
GaAlAsInfraredEmittingDiodesinø5mm(T–13/4)Package | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=875nm •Highreliability •Angleofhalfinten | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SPDTRFSWITCHMODEL | APITECH API Technologies Corp | APITECH | ||
PINDIODE DESCRIPTION TheseseriesofPINdiodesaredesignedforapplicationsrequiringsmallpackagesizeandmoderateaveragepowerhandlingcapability.ThelowcapacitanceoftheUM6000andUM6600allowsthemtobeusedasseriesswitchingelementsto1GHz.ThelowresistanceoftheUM6200isuseful | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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