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TPA2029D1YZFR.B

3-W Mono Class-D Audio Amplifier With SmartGain™ AGC/DRC

1FEATURES 2• Filter-Free Class-D Architecture • 3 W Into 4 Ω at 5 V (10% THD+N) • 880 mW Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • 3 Selectable AGC functions • Low Supply Current: 1.8 mA • Low Shutdown Current: 0.2 μA • High PSRR: 80 dB • Fast Start-up T

文件:490.57 Kbytes 页数:19 Pages

TI

德州仪器

TPA2029D1YZFT

3-W Mono Class-D Audio Amplifier With SmartGain™ AGC/DRC

1FEATURES 2• Filter-Free Class-D Architecture • 3 W Into 4 Ω at 5 V (10% THD+N) • 880 mW Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • 3 Selectable AGC functions • Low Supply Current: 1.8 mA • Low Shutdown Current: 0.2 μA • High PSRR: 80 dB • Fast Start-up T

文件:490.57 Kbytes 页数:19 Pages

TI

德州仪器

TPA2029D1YZFT.B

3-W Mono Class-D Audio Amplifier With SmartGain™ AGC/DRC

1FEATURES 2• Filter-Free Class-D Architecture • 3 W Into 4 Ω at 5 V (10% THD+N) • 880 mW Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • 3 Selectable AGC functions • Low Supply Current: 1.8 mA • Low Shutdown Current: 0.2 μA • High PSRR: 80 dB • Fast Start-up T

文件:490.57 Kbytes 页数:19 Pages

TI

德州仪器

TPA2029NND03-HF

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features - PNP Epitaxial Silicon Transistor. - Excellent hFE linearity. - For portable equipment(i.e. Mobile phone,MP3,. (i.e. Mobile phone, MP3, Note book PC, etc.) Mechanical data - Case: WBFBP-03B Plastic-Encapsulate Diodes - Moun

文件:150.89 Kbytes 页数:5 Pages

COMCHIP

典琦

TPA2029NND03Q-HF

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features - PNP Epitaxial Silicon Transistor. - Excellent hFE linearity. - For portable equipment(i.e. Mobile phone,MP3,. (i.e. Mobile phone, MP3, Note book PC, etc.) Mechanical data - Case: WBFBP-03B Plastic-Encapsulate Diodes - Moun

文件:150.89 Kbytes 页数:5 Pages

COMCHIP

典琦

TPA2029NND03R-HF

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features - PNP Epitaxial Silicon Transistor. - Excellent hFE linearity. - For portable equipment(i.e. Mobile phone,MP3,. (i.e. Mobile phone, MP3, Note book PC, etc.) Mechanical data - Case: WBFBP-03B Plastic-Encapsulate Diodes - Moun

文件:150.89 Kbytes 页数:5 Pages

COMCHIP

典琦

TPA2029NND03S-HF

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features - PNP Epitaxial Silicon Transistor. - Excellent hFE linearity. - For portable equipment(i.e. Mobile phone,MP3,. (i.e. Mobile phone, MP3, Note book PC, etc.) Mechanical data - Case: WBFBP-03B Plastic-Encapsulate Diodes - Moun

文件:150.89 Kbytes 页数:5 Pages

COMCHIP

典琦

TPA2031D1

2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

1FEATURES 2· Pin-to-Pin Compatibility with TPA2010D1 · 32 ms Start-up Time Eliminates CODEC Click/Pop noise · Maximum Battery Life and Minimum Heat – Efficiency With an 8-Ω Speaker: – 88% at 400 mW – 2.8-mA Quiescent Current – 0.5-mA Shutdown Current · Only Three External Components

文件:763.15 Kbytes 页数:26 Pages

TI

德州仪器

TPA2031D1

2.5-W MONO CLASS-D AUDIO AMPLIFIER WITH AUTO-RECOVERY

1FEATURES 2· Pin-to-pin compatibility with TPA2010D1 · Short Circuit Auto-recovery · Maximum Battery Life and Minimum Heat – Efficiency With an 8-Ω Speaker: – 88% at 400 mW – 80% at 100 mW – 2.8-mA Quiescent Current – 0.5-mA Shutdown Current · Only Three External Components – Opt

文件:752.68 Kbytes 页数:26 Pages

TI

德州仪器

TPA2031D1YZF

2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

1FEATURES 2· Pin-to-Pin Compatibility with TPA2010D1 · 32 ms Start-up Time Eliminates CODEC Click/Pop noise · Maximum Battery Life and Minimum Heat – Efficiency With an 8-Ω Speaker: – 88% at 400 mW – 2.8-mA Quiescent Current – 0.5-mA Shutdown Current · Only Three External Components

文件:763.15 Kbytes 页数:26 Pages

TI

德州仪器

技术参数

  • AEC Qualified:

    NO

  • Pb Free:

    YES

  • Halide free:

    NO

  • Reach:

    YES

  • RoHS:

    YES

  • Marketing Status:

    Active

  • VBR(V)min.:

    200

  • IPP(A)10/1000μS:

    50

  • VBO(V) min.:

    267

  • IPP(A)8/20μS:

    100

  • IFSM(A):

    30

  • IRM(μA):

    2

  • VRM (V):

    180

  • IR(mA):

    1

  • IBO(mA)Max.:

    800

  • IH(mA)Min.:

    150

  • CJ(pF) typ.:

    100

  • TJ(°C)max.:

    125

  • TJ(°C)min.:

    -55

  • ECCN(US):

    EAR99

  • Category:

    固态放电管

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更多TPA2供应商 更新时间2025-12-24 17:14:00