900V 170mΩ GaN FET in TO-220

The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon, through lowe • JEDEC qualified GaN technology\r\n• Dynamic RDS(on)eff production tested\r\n• Robust design, defined by\r\n• Intrinsic lifetime tests\r\n• Wide gate safety margin\r\n• Transient over-voltage capability\r\n• Very low QRR\r\n• Reduced crossover loss\r\n• RoHS-compliant and Halogen-free packaging\r\n;

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900V GaN FET in TO-220

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TI

德州仪器

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TI

德州仪器

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3PEAK

思瑞浦

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