P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

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SUTEX

TPS26400 42-V, 2-A eFuse With Integrated Reverse Input Polarity Protection

文件：5.40411 Mbytes 页数：54 Pages

TI

德州仪器

TPS2640 42-V, 2-A eFuse with Integrated Reverse Input Polarity Protection

1 Features • 4.2-V to 42-V operating voltage, 45-V absolute maximum • Integrated reverse input polarity protection down to –42 V – Zero additional components required • Integrated back to back MOSFETs with 150-mΩ total RON • 0.1-A to 2.23-A adjustable current limit (±5% accuracy at 1

文件：5.01712 Mbytes 页数：54 Pages

TI

德州仪器

Crystal Unit SMD 5.0x3.2 14.318MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 5.0mmx3.2mm crystal unit for use in wireless communications devices, especially for a n

文件：121.35 Kbytes 页数：7 Pages

TAI-SAW

嘉硕科技