P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：481.01 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

文件：639.78 Kbytes 页数：5 Pages

SUTEX

MOSFET, P-Channel Enhancement-Mode, -350V, 25 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (-2.4V max.) \nHigh input impedance \nLow input capacitance (60pF typical) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

Microchip

微芯科技

包装：袋 类别：静电控制，防静电，ESD，无尘室产品 静电控制器件容器，防静电仪器盒子 描述：TACKI PAK 3 1/2 X 2 9/16 X 1/2\

CORSTAT

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：481.01 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

文件：639.78 Kbytes 页数：5 Pages

SUTEX