丝印：TP259823ON；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259824LN；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259824LN；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259824ON；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259824ON；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259827LN；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259827LN；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259827ON；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

丝印：TP259827ON；Package：VQFN；TPS25982 2.7 V to 24 V, 15-A, 2.7-m廓 Smart eFuse With 1.5 Accurate Load Current Monitoring and Adjustable Transient Fault Management

文件：6.03254 Mbytes 页数：56 Pages

TI

德州仪器

MOSFET, P-Channel Enhancement-Mode, -20V, 2.0 Ohm

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperat Low threshold (-2.4V max.) \nHigh input impedance \nLow input capacitance (125pF max.) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

Microchip

微芯科技