TP242

1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS

TP2424

P-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)powertransistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwith

TP2424

P-Channel Enhancement Mode Vertical DMOS FETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu

TP2424

MOSFET, P-Channel Enhancement-Mode, -240V, 8 Ohm; Low threshold \nHigh input impedance \nLow input capacitance \nFast switching speeds \nFree from secondary breakdown \nLow input and output leakage;

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

TP2424N8

P-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)powertransistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwith

TP2424N8-G

P-Channel Enhancement Mode Vertical DMOS FETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu

TP2424ND

P-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)powertransistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwith

TP2424

P-Channel Enhancement-Mode Vertical DMOS FET

TP2424N8G

P-Channel Enhancement-Mode Vertical DMOS FET

TP2424N8-G

MOSFET 240V 8Ohm;