1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS

文件：62.65 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

文件：435.54 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：347.44 Kbytes 页数：3 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

文件：435.54 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：347.44 Kbytes 页数：3 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

文件：435.54 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

文件：269.26 Kbytes 页数：12 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FET

文件：269.26 Kbytes 页数：12 Pages

Microchip

微芯科技

6 MHz Bandwidth, Low Noise Precision Op‐amps

\n;

3PEAK

思瑞浦

MOSFET, P-Channel Enhancement-Mode, -240V, 8 Ohm

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperat Low threshold \nHigh input impedance \nLow input capacitance \nFast switching speeds \nFree from secondary breakdown \nLow input and output leakage;

Microchip

微芯科技