MOSFET, P-Channel Enhancement-Mode, -60V, 10 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (-2.4V max.)\nHigh input impedance\nLow input capacitance (95pF typical)\nFast switching speeds\nLow on-resistance\nFree from secondary breakdown\nLow input and output leakage;

Microchip

微芯科技