Teccor짰 brand Thyristors EV Series 0.8 Amp Sensitive SCRs

Description New device series offers high static dv/dt and lower turn off (tq) sensitive SCR with its small die planar construction design. It is specifcally designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications. All SCRs junctions are glass-passivated to ensure long

文件：879.75 Kbytes 页数：10 Pages

LITTELFUSE

力特

Sample Instructions for Choosing a Packing Option

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

文件：306.92 Kbytes 页数：8 Pages

LITTELFUSE

力特

Sample Instructions for Choosing a Packing Option

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

文件：306.92 Kbytes 页数：8 Pages

LITTELFUSE

力特

NPN Transistor

Features: •NPN silicon planar switching transistors •Fast switching devices exhibiting short turn-off and low saturation voltage characteristics •General purpose switching and amplifier applications

文件：232.04 Kbytes 页数：3 Pages

MULTICOMP

易络盟

N-Channel Depletion-Mode DMOS FET

General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources,

文件：651.65 Kbytes 页数：7 Pages

SUTEX

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：138.6 Kbytes 页数：1 Pages

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永而佳

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

文件：134.32 Kbytes 页数：1 Pages

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TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：144.11 Kbytes 页数：1 Pages

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TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：123.33 Kbytes 页数：1 Pages

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TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：125.85 Kbytes 页数：1 Pages

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