丝印：TO-3PF；Package：NCE3N170PF；N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

文件：669.68 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：TO-3PNT；Package：NCE40T60BP；600V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat） ⚫

文件：515.909 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：TO-3PN；Package：NCE40TD120LP；1200V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat

文件：388.88 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：TO-3PN；Package：NCE40TD135LP；1350V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat

文件：388.75 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：TO-3P；Package：NCE40TD60BP；600V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.8224 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：TO-3PF；Package：NCE40TD60BPF；600V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.87521 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：TO-3P；Package：NCE40TD65BP；650V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.85667 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：TO-3P；Package：NCE40TH60BP；600V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat） ⚫

文件：604.15 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：TO-3PF；Package：NCE40TH60BPF；600V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE（sat）

文件：1.03678 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：TO-3P；Package：NCE50TD120BP；1200V, 50A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.42089 Mbytes 页数：8 Pages

NCEPOWER

新洁能