型号：HGI090N06SL；Package：GI090N06SL；60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

文件：913.78 Kbytes 页数：6 Pages

恒泰柯半导体

型号：NCE07T60BI；Package：NCE07T60BI；600V, 7A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

文件：559.26 Kbytes 页数：7 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

型号：NCE07TD60BI；Package：NCE07TD60BI；600V, 7A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.05544 Mbytes 页数：8 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

型号：RM2N650IP；Package：2N650；N-Channel Super Junction Power MOSFET

文件：677.82 Kbytes 页数：9 Pages

型号：TO-251；1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

文件：1.96748 Mbytes 页数：8 Pages

ZPSEMIZP Semiconductor

至尚臻品

型号：TO-251；TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：171.16 Kbytes 页数：2 Pages

永而佳

型号：TO-251；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：67.29 Kbytes 页数：1 Pages

永而佳

型号：TO-251；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：132.25 Kbytes 页数：1 Pages

永而佳

型号：TO-251；TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：124.74 Kbytes 页数：1 Pages

永而佳

型号：TO-251；TO-251/TO-252-2 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary darlington power transistors dpak for surface mount applications

文件：109.68 Kbytes 页数：2 Pages

永而佳