TNPW1210E3

High Stability Thin Film Flat Chip Resistors

•Superiormoistureresistivity(85°C;85%RH) •Excellentoverallstabilityatdifferent environmentalconditions≤0.05%(1000h ratedpowerat70°C) •AEC-Q200qualified •Singlelotdatecode(optional) •Sulfurresistanceverifiedaccordingto ASTMB809

TNPW1210E3

High Stability Thin Film Flat Chip Resistors

FEATURES •Superiormoistureresistivity(85°C;85%RH) •Excellentoverallstabilityatdifferent environmentalconditions≤0.05%(1000h ratedpowerat70°C) •AEC-Q200qualified •Singlelotdatecode(optional) •Advancedsulfurresistanceverifiedaccording toASTMB809

BTA1210E3

PNPEpitaxialPlanarTransistor

Description TheBTA1210E3isaPNPDarlingtontransistor,designedforuseingeneralpurposeamplifierandlowspeedswitchingapplication. Features •HighBVCEO •HighDCcurrentgain •Highcurrentcapability •Monolithicconstructionwithbuilt-inbase-emittershuntresistors

CRCW1210E3

StandardThickFilmChipResistors

FEATURES •Stabilityatdifferentenvironmentalconditions R/R1%(1000hratedpowerat70°C) •2mmpitchpackagingoptionfor0603size •AEC-Q200qualified •Materialcategorization:fordefinitionsofcompliance APPLICATIONS •Automotive •Industrial •Telecommunication

CRCW1210E3

StandardThickFilmChipResistors

FEATURES •Stabilityatdifferentenvironmentalconditions ΔR/R≤1%(1000hratedpowerat70°C) •2mmpitchpackagingoptionfor0603size •AEC-Q200qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Automotive

MLV1210E3

SMD1210MultilayerVaristor

FEATURES •Surfacemountmultilayersurgesuppressor •Inherentbidirectionalclamping •Excellentenergy/volumeratio •Suitableforreflowsoldering •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912

MLV1210E3

MultilayerVaristor