Switching Regulator IC for RCC Method Power Supplies Applications

Features • Original control IC for Delay RCC-type. • High voltage power MOSFET with current sense. • Overload protection. • Only few external components required. • Small Full-Isolation package : TO-220FI5H.

文件：48.9 Kbytes 页数：4 Pages

SANYO

三洋

Switching Regulator IC for RCC Method Power Supplies Applications

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 49A, RDS (ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 12mW @VGS = 4.5V.

文件：742.07 Kbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 7.4mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 12mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：849.62 Kbytes 页数：6 Pages

CET-MOS

华瑞

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

文件：157.86 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体