RF AMPLIFIER MODEL

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APITECH

High temperature 30 A, 600 V D2PAK thyristor SCRs

Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/μs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • ECOPACK2 compliant Description Thanks to its operating ju

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STMICROELECTRONICS

意法半导体

High temperature 30 A, 600 V D2PAK thyristor SCRs

Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/μs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • ECOPACK2 compliant Description Thanks to its operating ju

文件：267.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High temperature 30 A, 600 V TO220 insulated thyristor SCRs

Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/μs up to 150 °C • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • ECOPACK2 compliant • Insulated package TO-220AB: – Insulated voltage: 2500 VRMS – Complies with U

文件：232.79 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High temperature 30 A, 600 V TO220 thyristor SCRs

Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/μs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • ECOPACK2 compliant Description Thanks to a junction tempe

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STMICROELECTRONICS

意法半导体

30 A 600 V D2PAK高温晶闸管SCR

Thanks to its operating junction temperature up to 150°C, the TN3015H-6G SCR in D2PAK package offers high thermal performance operation up to 30 A RMS in a compact SMD design.\n\n Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on curren • High junction temperature: Tj = 150 °C \n• High noise immunity dV/dt = 1000 V/µs up to 150 °C \n• Gate triggering current IGT = 15 mA \n• Peak off-state voltage VDRM/VRRM = 600 V \n• High turn-on current rise dI/dt = 100 A/µs \n• ECOPACK2 compliant;

ST

意法半导体

高温30A SCR

Thanks to its operating junction temperature up to 150°C, the TN3015H-6I offers high thermal performance operation up to 30 A rms.\n\n Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design ro • High junction temperature: Tj = 150 °C \n• High noise immunity dV/dt = 1000 V/µs up to 150 °C \n• Peak off-state voltage VDRM/VRRM = 600 V \n• High turn-on current rise dI/dt = 100 A/µs \n• ECOPACK2 compliant \n• Insulated package TO-220AB: \n •Insulated voltage: 2500 VRMS \n •Complies with UL 155;

ST

意法半导体

高温30A SCR

Thanks to a junction temperature Tj up to 150 °C and a non-isolated TO-220 package, the TN3015H-6T offers high thermal performance operation up to 30 A rms.\n\n The trade-off between the device’s noise immunity (dV/dt = 1000 V/μs), its gate triggering current (IGT = 15 mA) and its turn-on current ri • High junction temperature: Tj = 150 °C \n• High noise immunity dV/dt = 1000 V/µs up to 150 °C \n• Gate triggering current IGT = 15 mA \n• Peak off-state voltage VDRM/VRRM = 600 V \n• High turn-on current rise dI/dt = 100 A/µs \n• ECOPACK2 compliant;

ST

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 晶闸管 - SCR 描述：DFD THYR TRIAC \u0026 RECTIFIER

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶闸管 - SCR 描述：SCR 600V 30A TO220AB

STMICROELECTRONICS

意法半导体