| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TN2510 | N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件:478.02 Kbytes 页数:4 Pages | SUTEX | SUTEX | |
TN2510 | N-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i 文件:592.02 Kbytes 页数:5 Pages | SUTEX | SUTEX | |
TN2510 | N-Channel Enhancement-Mode Vertical DMOS FET 文件:770.79 Kbytes 页数:14 Pages | MICROCHIP 微芯科技 | MICROCHIP | |
TN2510 | MOSFET, N-Channel Enhancement-Mode, 100V, 1.5 Ohm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (2.0V max.) \nHigh input impedance \nLow input capacitance (125pF max.) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage; | Microchip 微芯科技 | Microchip | |
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件:478.02 Kbytes 页数:4 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i 文件:592.02 Kbytes 页数:5 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件:478.02 Kbytes 页数:4 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:770.79 Kbytes 页数:14 Pages | MICROCHIP 微芯科技 | MICROCHIP | ||
N-Channel Enhancement-Mode Vertical DMOS FETs | Microchip 微芯科技 | Microchip |
技术参数
- BVdss min (V):
100
- Rds (on) max (Ohms):
1.5
- CISSmax (pF):
125
- Vgs(th) max (V):
2.0
- Packages:
3\\SOT-89
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPEXTEX |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
SUPEXTEX |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
询价 | ||
SUPERTEX |
22+ |
N/A |
20000 |
只做原装 品质保障 |
询价 | ||
SUPERTEXINC |
23+ |
TO223/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
SUPERTEX |
12+ |
SOT89 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
SUPERTEXINC |
05+ |
原厂原装 |
6411 |
只做全新原装真实现货供应 |
询价 | ||
SUPERTEX |
23+ |
SOT-89 |
10000 |
原装正品,假一罚十 |
询价 | ||
Supertexinc |
24+ |
SOT-89 |
10000 |
新进库存/原装 |
询价 | ||
SUPERTEX |
24+ |
SOT-89-3 |
1450 |
只做原装正品 |
询价 | ||
Supertex |
25+ |
SOT-89 |
500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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