20 A 600 V high temperature SCR thyristors in insulated TO-220

Features • High junction temperature: Tj max. = 150 °C • High static immunity dV/dt = 750 V/μs up to 150 °C • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • Insulated package TO-220AB: – Insulated voltage: 2500 VRMS – Complies with UL 1557 (File ref

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STMICROELECTRONICS

意法半导体

High temperature 20 A SCRs

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STMICROELECTRONICS

意法半导体

High temperature 20 A SCRs

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STMICROELECTRONICS

意法半导体

High temperature 20 A SCRs

Thanks to a junction temperature Tjup to 150 °C and an insulated TO-220FPAB package, the TN2015H-6FP offers high thermal performance operation up to 20 A rms.\n The trade-off between the device’s noise immunity (dV/dt = 750 V/μs), its gate triggering current (IGT= 15 mA) and its turn-on current • High junction temperature: Tj= 150 °C\n• High noise immunity dV/dt = 750 V/μs up to 150 °C\n• Gate triggering current IGT= 15 mA\n• Blocking voltage VDRM/VRRM = 600 V• High turn on current rise dI/dt: 100 A/μs\n• ECOPACK®2 compliant component\n• Complies with UL standards (File ref: E81734)\n• Ins;

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高温20 A SCR

Thanks to a junction temperature Tjup to 150 °C and a non-isolated TO-220 package, the TN2015H-6T offers high thermal performance up to 20 A rms.\n\n The trade-off between the device’s noise immunity (dV/dt = 750 V/μs), its gate triggering current (IGT= 15 mA) and its turn-on current rise (dI/dt = 1 • High junction temperature: Tj= 150 °C \n• High noise immunity dV/dt = 750 V/μs up to 150 °C \n• Gate triggering current IGT= 15 mA \n• Blocking voltage VDRM/VRRM = 600 V \n• High turn on current rise dI/dt: 100 A/μs \n• ECOPACK®2 compliant component;

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意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶闸管 - SCR 描述：SCR 600V 20A TO220FPAB

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意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶闸管 - SCR 描述：SCR 600V 20A TO220AB

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：盒 类别：分立半导体产品 晶闸管 - SCR 描述：SCR 600V 20A TO220AB

STMICROELECTRONICS

意法半导体