High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description Packaged in a no

文件：425.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶闸管 - SCR 描述：SCR 600V 20A TO220AB

STMICROELECTRONICS

意法半导体

High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component  TO-220FPAB insulated package:

文件：344.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description This device offe

文件：414.48 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description This device offe

文件：414.48 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体