首页 >TN1726>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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CrystalUnitSMD2.0x1.640.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
IsolatedDriveTransmitter | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
IsolatedDriveTransmitter | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1726isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandsoon. FEATURES •2.5-Vgatedriveandlowon-resistance RDS(on)1=9.1mΩMAX.(VGS=4.5V,ID=6.0A) RDS(on)2=10.0mΩMAX.(VGS=4.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •2.5-Vgatedriveandlowon-resistance RDS(on)1=9.1mΩMAX.(VGS=4.5V,ID=6.0A) RDS(on)2=10.0mΩMAX.(VGS=4.0V,ID=6.0A) RDS(on)3=12.5mΩMAX.(VGS=2.5V,ID=6.0A) •LowCiss:Ciss=2700pFTYP. •Built | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •2.5-Vgatedriveandlowon-resistance RDS(on)1=9.1mΩMAX.(VGS=4.5V,ID=6.0A) RDS(on)2=10.0mΩMAX.(VGS=4.0V,ID=6.0A) RDS(on)3=12.5mΩMAX.(VGS=2.5V,ID=6.0A) •LowCiss:Ciss=2700pFTYP. •Built | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1726isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandsoon. FEATURES •2.5-Vgatedriveandlowon-resistance RDS(on)1=9.1mΩMAX.(VGS=4.5V,ID=6.0A) RDS(on)2=10.0mΩMAX.(VGS=4.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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